n-channel enhancement mode vertical dmos fet issue 1 C march 94 features * 240 volt v ds *r ds(on) =16 w applications * telephone handsets absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 240 v continuous drain current at t amb =25c i d 160 ma pulsed drain current i dm 2a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 240 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 1 3 v id=1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =240 v, v gs =0 v ds =192 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 500 ma v ds =25 v, v gs =10v static drain-source on-state resistance (1) r ds(on) 16 w v gs =10v,i d =250ma forward transconductance (1)(2) g fs 100 ms v ds =25v,i d =250ma input capacitance (2) c iss 85 pf common source output capacitance (2) c oss 20 pf v ds =25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 7pf turn-on delay time (2)(3) t d(on) 7ns v dd ? 25v, i d =250ma rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 16 ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. ( 3 e-line to92 compatible 3-350 d g s typical characteristics output characteristics v ds- drain source voltage (volts) i d(o n ) on sta te d r a i n c u r r en t( am ps) 1.4 1.2 1.0 0.6 0.2 0 0.4 0.8 1.6 1.8 transfer characteristics normalised r ds(on) and v gs(th) v temperature temperature (c) no r mal ise d r ds(on) and v g s(t h) 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.4 0.8 dr a in -s ourc e r e s i s t an c e r d s( on) g ate t h res h o l d v o l tage v gs ( th ) i d= 0.25a 02 46810 1.0 0.8 0.6 0.4 0 0.2 020 406080100 80 m s pulse 2.0 saturation characteristics v ds- drain source voltage (volts) on-resistance vs gate-source voltage v gs -gate source voltage (volts) 02 46810 14 12 10 6 2 0 4 8 16 18 20 v ds- drain source (volts) r ds(on) -drain source resistance ( w ) voltage saturation characteristics v gs -gate source voltage (volts) 1.4 1.2 1.0 0.6 0.2 0 0.4 0.8 1.6 1.8 02 4 6 8 10 2.0 v gs= 10v 8v 6v 5v 4v 3v 2v v gs= 10v 7v 5v 4v 3v 2v i d= 1a 500ma 100ma v ds= 25v v ds= 10v i d( o n ) - on - sta te d r a i n c u r r en t ( amps ) i d( o n) - on- st a te dr ain cu r r e nt ( amps) v gs -gate source voltage (volts) v gs= 10v i d= 1ma v gs= v ds 1 110 100 10 20 i d= 1a 500ma i00ma ZVN0124A ZVN0124A 3-351
n-channel enhancement mode vertical dmos fet issue 1 C march 94 features * 240 volt v ds *r ds(on) =16 w applications * telephone handsets absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 240 v continuous drain current at t amb =25c i d 160 ma pulsed drain current i dm 2a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 240 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 1 3 v id=1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =240 v, v gs =0 v ds =192 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 500 ma v ds =25 v, v gs =10v static drain-source on-state resistance (1) r ds(on) 16 w v gs =10v,i d =250ma forward transconductance (1)(2) g fs 100 ms v ds =25v,i d =250ma input capacitance (2) c iss 85 pf common source output capacitance (2) c oss 20 pf v ds =25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 7pf turn-on delay time (2)(3) t d(on) 7ns v dd ? 25v, i d =250ma rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 16 ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. ( 3 e-line to92 compatible 3-350 d g s typical characteristics output characteristics v ds- drain source voltage (volts) i d(o n ) on sta te d r a i n c u r r en t( am ps) 1.4 1.2 1.0 0.6 0.2 0 0.4 0.8 1.6 1.8 transfer characteristics normalised r ds(on) and v gs(th) v temperature temperature (c) no r mal ise d r ds(on) and v g s(t h) 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.4 0.8 dr a in -s ourc e r e s i s t an c e r d s( on) g ate t h res h o l d v o l tage v gs ( th ) i d= 0.25a 02 46810 1.0 0.8 0.6 0.4 0 0.2 020 406080100 80 m s pulse 2.0 saturation characteristics v ds- drain source voltage (volts) on-resistance vs gate-source voltage v gs -gate source voltage (volts) 02 46810 14 12 10 6 2 0 4 8 16 18 20 v ds- drain source (volts) r ds(on) -drain source resistance ( w ) voltage saturation characteristics v gs -gate source voltage (volts) 1.4 1.2 1.0 0.6 0.2 0 0.4 0.8 1.6 1.8 02 4 6 8 10 2.0 v gs= 10v 8v 6v 5v 4v 3v 2v v gs= 10v 7v 5v 4v 3v 2v i d= 1a 500ma 100ma v ds= 25v v ds= 10v i d( o n ) - on - sta te d r a i n c u r r en t ( amps ) i d( o n) - on- st a te dr ain cu r r e nt ( amps) v gs -gate source voltage (volts) v gs= 10v i d= 1ma v gs= v ds 1 110 100 10 20 i d= 1a 500ma i00ma ZVN0124A ZVN0124A 3-351
typical characteristics transconductance v drain current i d(on) -drain current (amps) 0 0.2 0.4 0.6 0.8 1.0 500 400 300 100 0 25v v ds = g fs -fo r war d tr a nscond u c t ance ( ms) 200 transconductance v gate-source voltage v gs -gate-source voltage (volts) 02 4 6 .810 500 400 300 100 0 25v v ds = 200 g fs - f o rward tran s con d uctan c e (ms) capacitance v drain-source voltage c-capacita n ce ( p f ) 30 0 10 20 40 50 60 010 2030 40 50 v ds -drain-source voltage (volts) c iss c oss c rss 70 6 0 2 4 8 0 0.4 0.8 1.2 1.6 2.0 10 v gs - gate-source voltage (volts) gate charge v gate-source voltage q-charge (nc) i d= 700ma 50v 100v v ds = 180v 0.2 0.6 1.0 1.4 1.8 power v temperature derating curve (ambient) 40 80 120 160 200 p d -power dissipation (w atts) .20 60 100 140 180 t amb - ambient temperature (c) 0.8 0.4 0.6 0.2 1.0 ZVN0124A 3-352
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